CM1000HA-24H

Mitsubishi IGBT Module, 1000 Amperes, 1200 Volts, Low Drive Power, Low VCE(sat)

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Price:: US $360.00~450.00 / piece [Get Latest Price]

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	US $360.00~450.00

PartNumber:: CM1000HA-24H

Brand:: Mitsubishi Electric Semiconductor - MES | Pack: DIP | D/C: 06+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-08-28

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Part Number:CM1000HA-24H
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Product Summary

The Mitsubishi IGBT Module CM1000HA-24H is designed for use in switching applications. The module CM1000HA-24H consists of one IGBT in a single configuration with a reverse-onnected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Parametrics

CM1000HA-24H absolute maximum ratings: (1)Junction Temperature, Tj: –40 to +150 ℃; (2)Storage Temperature, Tstg: –40 to +125 ℃; (3)Collector-Emitter Voltage (G-E SHORT), VCES: 1200 Volts; (4)Gate-Emitter Voltage (C-E SHORT), VGES: ±20 Volts; (5)Collector Current (TC = 25℃), IC: 1000 Amperes; (6)Peak Collector Current (Tj ≤ 150℃), ICM: 2000 Amperes; (7)Emitter Current (TC = 25℃), IE: 1000 Amperes; (8)Peak Emitter Current, IEM: 2000 Amperes; (9)Maximum Collector Dissipation (TC = 25℃), Pc: 5800 Watts; (10)Mounting Torque, M8 Main Terminal: 8.83 ~ 10.8 N · m; (11)Mounting, Torque M6 Mounting: 1.96 ~ 2.94 N · m; (12)Mounting, Torque M4 Terminal: 0.98 ~ 1.47 N · m; (13)Weight: 1600 Grams; (14)Isolation Voltage (Main Terminal to Baseplate, AC 1 min.), Viso: 2500 Vrma.

Features

CM1000HA-24H features: (1)Low Drive Power; (2)Low VCE(sat); (3)Discrete Super-Fast Recovery Free-Wheel Diode; (4)High Frequency Operation; (5)Isolated Baseplate for Easy Heat Sinking.