Product Summary

The BSM150GT120DN2 is an IGBT power module.

Parametrics

BSM150GT120DN2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200 V; (3)Gate-emitter voltage VGE: ± 20V; (4)DC collector current, IC: 200A; (5)Pulsed collector current, tp = 1 ms, ICpuls: 400A; (6)Power dissipation per IGBT: 1250W; (7)Chip temperature Tj: + 150 ℃; (8)Storage temperature Tstg: -55 to + 150℃; (9)Thermal resistance, chip case RthJC≤ 0.12 K/W; (10)Diode thermal resistance, chip case RthJCD≤ 0.28K/W; (11)Insulation test voltage, t = 1min. Vis: 2500 Vac; (12)Creepage distance: 20 mm; (13)Clearance: 11mm; (14)DIN humidity category, DIN 40 040: F sec.

Features

BSM150GT120DN2 features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

BSM150GT120DN2 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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Data Sheet
0-1: $155.20
1-10: $139.67
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(USD)		 Quantity
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BSM100GB120DLC
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Data Sheet
0-6: $78.93
6-10: $71.03
BSM100GB120DLCK
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Data Sheet
0-1: $49.93
1-5: $47.43
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Infineon Technologies
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Data Sheet
0-1: $82.74
1-10: $74.47