(China (Mainland))
Product Summary
The GA600GD25s is a Standard Speed IGBT.
Parametrics
GA600GD25s absolute maximum ratings: (1)VCES Collector-to-Emitter Voltage 250 V; (2)IC @ TC = 25℃ Continuous Collector Current 600A; (3)ICM Pulsed Collector Current 1200 A; (4)ILM Peak Switching Current 1200A; (5)IFM Peak Diode Forward Current 1200A; (6)VGE Gate-to-Emitter Voltage ±17 V; (7)VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500V; (8)PD @ TC = 25℃ Maximum Power Dissipation 1920 W; (9)PD @ TC = 85℃ Maximum Power Dissipation 1000W; (10)TJ Operating Junction Temperature Range -40 to +150℃; (11)T Storage Temperature Range -40 to +125℃.
Features
GA600GD25s features: (1)Standard speed, optimized for battery powered application; (2)Very low conduction losses; (3)HEXFREDTM antiparallel diodes with ultra-soft recovery; (4)Industry standard package; (5)UL recognition pending; (6)Internal thermistor.
Diagrams
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 GA600GD25S |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||
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GA600GD25S |
Other |
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Data Sheet |
Negotiable |
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GA600HD25S |
Other |
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Data Sheet |
Negotiable |
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